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DNLS160V डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR - Diodes

भाग संख्या DNLS160V
समारोह LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
मैन्युफैक्चरर्स Diodes 
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DNLS160V pdf
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Min
80
60
5
Typ
Collector Cutoff Current
ICBO
⎯⎯
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
ICES
IEBO
hFE
VCE(SAT)
RCE(SAT)
VBE(SAT)
VBE(ON)
Cobo
fT
ton
td
tr
toff
ts
tf
⎯⎯
⎯⎯
250 320
200 280
100 165
80
80
140
140
0.91
0.81
7
150 270
90
17
73
300
220
80
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
Max
100
50
100
100
110
140
250
250
1.1
0.9
10
Unit Test Condition
V IC = 100μA, IE = 0
V IC = 10mA, IB = 0
V IE = 100μA, IC = 0
nA VCB = 60V, IE = 0
μA VCB = 60V, IE = 0, TA = 150°C
nA VCE = 60V, VBE = 0
nA VEB = 5V, IC = 0
VCE = 5V, IC = 1mA
V VCE = 5V, IC = 500mA
VCE = 5V, IC = 1A
IC = 100mA, IB = 1mA
mV IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
mIC = 1A, IB = 100mA
V IC = 1A, IB = 50mA
V VCE = 5V, IC = 1A
pF VCB = 10V, f = 1.0MHz
MHz VCE = 10V, IC = 50mA, f = 100MHz
ns
ns
ns VCC = 10V
ns IC = 0.5A, IB1 = IB2 = 25mA
ns
ns
300
250
200
150
100
50
0
0
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25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Maximum Power Dissipation vs.
Ambient Temperature
150
Fig. 2 Typical Collector Current vs.
Collector-Emitter Voltage
DS31248 Rev. 3 - 2
2 of 4
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DNLS160V
© Diodes Incorporated

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भाग संख्याविवरणविनिर्माण
DNLS160VLOW VCE(SAT) NPN SURFACE MOUNT TRANSISTORDiodes
Diodes


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