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IXFX40N90P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Polar Power MOSFET HiPerFET - IXYS Corporation

भाग संख्या IXFX40N90P
समारोह Polar Power MOSFET HiPerFET
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFX40N90P?> डेटा पत्रक पीडीएफ

IXFX40N90P pdf
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
18 30
S
RGi Gate input resistance
1.5 Ω
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
14 nF
896 pF
58 pF
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
53
50
77
46
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
230
70
100
nC
nC
nC
RthJC
RthCS
0.13 °C/W
0.15 °C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS VGS = 0V
40 A
ISM Repetitive, pulse width limited by TJM
VSD IF = IS, VGS = 0V, Note 1
160 A
1.5 V
trr
QRM
IRM
IF = 20A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
300
1.7
14
ns
μC
A
IXFK40N90P
IXFX40N90P
TO-264 (IXFK) Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.021
.202
.114
.083
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.125
.010
.820
.102
.144
.239
.330
.150
.070
.238
.247
.342
.170
.090
.248
.062 .072
PLUS 247TM (IXFX) Outline
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
.190
.090
.075
.045
.075
.115
.024
.819
.620
.205
.100
.085
.055
.084
.123
.031
.840
.635
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
.215 BSC
.780 .800
.150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFX40N90PPolar Power MOSFET HiPerFETIXYS Corporation
IXYS Corporation
IXFX40N90PPolar Power MOSFET HiPerFETIXYS Corporation
IXYS Corporation


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