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IXFV18N90PS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Polar Power MOSFET HiPerFET - IXYS Corporation

भाग संख्या IXFV18N90PS
समारोह Polar Power MOSFET HiPerFET
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFV18N90PS?> डेटा पत्रक पीडीएफ

IXFV18N90PS pdf
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs VDS = 20V, ID = 0.5 • ID25, Note 1
RGi Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-247, PLUS220)
IXFH18N90P
IXFT18N90P
Characteristic Values
Min. Typ.
Max.
6 10
S
1.2 Ω
5230
366
53
pF
pF
pF
40 ns
33 ns
60 ns
44 ns
97 nC
30 nC
40 nC
0.25
0.23 °C/W
°C/W
IXFV18N90P
IXFV18N90PS
Source-Drain Diode
TJ = 25°C Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 9A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ.
Max.
18 A
72 A
1.5 V
300 ns
1.0 μC
10.8
A
Note 1. Pulse test, t 300μs; duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFV18N90PPolar Power MOSFET HiPerFETIXYS Corporation
IXYS Corporation
IXFV18N90PSPolar Power MOSFET HiPerFETIXYS Corporation
IXYS Corporation


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