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IXGQ90N27PB डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - IXYS

भाग संख्या IXGQ90N27PB
समारोह IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGQ90N27PB?> डेटा पत्रक पीडीएफ

IXGQ90N27PB pdf
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
gfs IC = 45 A, VCE = 10 V, Note 1
30 48
S
Cies
Coes
Cres
Qg
Qge
Qgc
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 45 A, VGE = 15 V, VCE = 0.5 VCES
2750
180
48
79
16
29
pF
pF
pF
nC
nC
nC
td(on)
tri
td(off)
t
fi
Resistive load, TJ = 25°C
IC = 50 A, VGE = 15 V
V
CE
=
200
V,
R
G
=
5
Ω
21 ns
43 ns
82 ns
170 350 ns
td(on)
t
ri
td(off)
tfi
RthJC
RthCS
Resistive load, TJ = 125°C
I = 50 A, V = 15 V
C GE
VCE = 200 V, RG = 5 Ω
21 ns
68 ns
88 ns
340 ns
0.833 K/W
0.25 K/W
Note 1: Pulse test, t < 300 us, duty cycle < 2%
TO-3P Outline
www.DataSheet4U.com
IXGQ90N27PB
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineering
lots; but also may yet contain some information supplied during a pre-production design
evaluation. IXYS reserves the right to change limits, test conditions, and dimensions
without notice.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2

विन्यास 5 पेज
डाउनलोड[ IXGQ90N27PB Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGQ90N27PBIGBTIXYS
IXYS


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