DataSheet.in

DMP2035U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2035U
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
1 Page
		
<?=DMP2035U?> डेटा पत्रक पीडीएफ

DMP2035U pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 8) VGS = -4.5V
Steady
State
Pulsed Drain Current (Note 9)
Maximum Continuous Body Diode Forward Current (Note 8)
Pulsed Body Diode Forward Current (Note 9)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
Value
-20
±10
-4.9
-4.0
-24
-1.2
-24
DMP2035U
Unit
V
V
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Total Power Dissipation (Note 8)
Thermal Resistance, Junction to Ambient (Note 8)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.81
153.5
1.2
100
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Symbol Min Typ Max
BVDSS
-20
IDSS — — -1.0
IGSS — — ±10
VGS(TH)
-0.4
-0.7
-1.0
Static Drain-Source On-Resistance
23 35
RDS(ON)
30
45
41 62
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
14
-0.7 -1.0
1,610
157
145
9.45
15.4
2.5
3.3
16.8
12.4
94.1
42.4
Notes:
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate.
9. Repetitive rating, pulse width limited by junction temperature.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -20V, VGS = 0V
μA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4.0A
mΩ VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.0A
s VDS = -5V, ID = -4A
V VGS = 0V, IS = -1A
pF
pF VDS = -10V, VGS = 0V
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC VGS = -4.5V, VDS = -10V,
ID = -4A
nC
ns
ns VDS = -10V, VGS = -4.5V,
ns RL = 10Ω, Rg = 6.0Ω, ID = -1A
ns
DMP2035U
Document number: DS31830 Rev. 9 - 2
2 of 7
www.diodes.com
February 2018
© Diodes Incorporated

विन्यास 7 पेज
डाउनलोड[ DMP2035U Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
DMP2035UP-CHANNEL ENHANCEMENT MODE MOSFETDiodes
Diodes
DMP2035UFCLP-CHANNEL ENHANCEMENT MODE MOSFETDiodes
Diodes


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English