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IXGR60N60C3C1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - GenX3 600V IGBT w/ SiC Anti-Parallel Diode - IXYS

भाग संख्या IXGR60N60C3C1
समारोह GenX3 600V IGBT w/ SiC Anti-Parallel Diode
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGR60N60C3C1?> डेटा पत्रक पीडीएफ

IXGR60N60C3C1 pdf
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs IC = 40A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 50A, VGE = 15V, VCE = 0.5 VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 40A, VGE = 15V
VCE = 480V, RG = 3Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Inductive Load, TJ = 125°C
IC = 40A, VGE = 15V
VCE = 480V, RG = 3Ω
Note 2
Characteristic Values
Min. Typ. Max.
23 38
S
2810
210
80
pF
pF
pF
115 nC
43 nC
22 nC
24
40
0.83
70
50
0.45
ns
ns
mJ
110 ns
ns
0.80 mJ
23 ns
39 ns
0.78 mJ
112 ns
86 ns
0.80 mJ
0.73 °C/W
0.15 °C/W
IXGR60N60C3C1www.DataSheet4U.com
ISOPLUS247 (IXGR) Outline
Reverse Diode (SiC)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF IF = 20A, VGE = 0V, Note 1
RthJC
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1.65
1.80
2.10 V
V
1.75 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

विन्यास 6 पेज
डाउनलोड[ IXGR60N60C3C1 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
IXGR60N60C3C1GenX3 600V IGBT w/ SiC Anti-Parallel DiodeIXYS
IXYS


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