DataSheet.in

IXGP30N60C3C1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - GenX3 600V IGBT w/ SiC Anti-Parallel Diode - IXYS

भाग संख्या IXGP30N60C3C1
समारोह GenX3 600V IGBT w/ SiC Anti-Parallel Diode
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGP30N60C3C1?> डेटा पत्रक पीडीएफ

IXGP30N60C3C1 pdf
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 20A, VCE = 10V, Note 1
Cies
Coes VCE = 25V, VGE = 0V, f = 1MHz
Cres
Qg
Qge IC = 20A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
Note 2
RthJC
RthCS
TO-220
TO-247
IXGA30N60C3C1
Characteristic Values
Min. Typ. Max.
9 16
S
1075
196
29
pF
pF
pF
38 nC
8 nC
17 nC
17 ns
20 ns
0.12 mJ
42 75 ns
47 ns
0.09 0.18 mJ
16 ns
21 ns
0.16 mJ
70 ns
90 ns
0.33 mJ
0.56 °C/W
0.50 °C/W
0.21 °C/W
IXGwPw3w.0DaNtaS6he0et4CU.3comC1
IXGH30N60C3C1
Reverse Diode (SiC)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF IF = 10A, VGE = 0V, Note 1
RthJC
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1.65 2.10 V
1.80 V
1.10 °C/W
Notes
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

विन्यास 7 पेज
डाउनलोड[ IXGP30N60C3C1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGP30N60C3C1GenX3 600V IGBT w/ SiC Anti-Parallel DiodeIXYS
IXYS


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English