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IXFX360N15T2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - GigaMOS TrenchT2 HiperFET Power MOSFET - IXYS

भाग संख्या IXFX360N15T2
समारोह GigaMOS TrenchT2 HiperFET Power MOSFET
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFX360N15T2?> डेटा पत्रक पीडीएफ

IXFX360N15T2 pdf
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1
140 230
S
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
47.5
3060
665
nF
pF
pF
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
50
170
115
265
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
715
185
200
nC
nC
nC
RthJC
RthCS
0.09 °C/W
0.15 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = 60A, VGS = 0V, Note 1
trr
QRM
IRM
IF = 160A, -di/dt = 100A/μs
VR = 60V, VGS = 0V
Characteristic Values
Min. Typ. Max.
360 A
1440 A
1.2 V
150 ns
0.50 μC
9.00 A
IXwFwwK.D3ata6Sh0eeNt4U1.co5mT2
IXFX360N15T2
TO-264 (IXFK) Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82
2.54
2.00
1.12
2.39
2.90
5.13
2.89
2.10
1.42
2.69
3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00
20.32
2.29
0.25
20.83
2.59
3.17 3.66
6.07
8.38
3.81
1.78
6.27
8.69
4.32
2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.010
.820
.102
.125 .144
.239
.330
.150
.070
.247
.342
.170
.090
.238 .248
.062 .072
PLUS 247TM (IXFX) Outline
Note 1. Pulse test, t 300μs; duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
.190
.090
.075
.045
.075
.115
.024
.819
.620
.205
.100
.085
.055
.084
.123
.031
.840
.635
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
.215 BSC
.780 .800
.150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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डाउनलोड[ IXFX360N15T2 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFX360N15T2GigaMOS TrenchT2 HiperFET Power MOSFETIXYS
IXYS
IXFX360N15T2GigaMOS TrenchT2 HiperFET Power MOSFETIXYS
IXYS


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