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IXKC25N80C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET ISOPLUS220 - IXYS

भाग संख्या IXKC25N80C
समारोह Power MOSFET ISOPLUS220
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXKC25N80C?> डेटा पत्रक पीडीएफ

IXKC25N80C pdf
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IXKC 25N80C
Symbol
gfs
Ciss
Coss
Crss
Qg(on)
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
RthCH
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS220 Outline
VDS = 15 V; ID = 0.5 • ID90, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
14 20
4600
2500
120
S
pF
pF
pF
VGS = 10 V, VDS = 640 V, ID = ID90
VGS = 10 V, VDS = 640V
ID = 35 A, RG = 2.2
180 nC
20 nC
80 nC
25 ns
25 ns
75 ns
10 ns
0.9 K/W
0.30 K/W
Reverse Conduction
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
min.
otherwise specified)
typ. max.
VSD IF = 12.5 A, VGS = 0 V
Note 1
1 1.2 V
Note: 1. Pulse test, t 300 µs, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

विन्यास 4 पेज
डाउनलोड[ IXKC25N80C Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXKC25N80CPower MOSFET ISOPLUS220IXYS
IXYS


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