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IXGP30N60B2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFAST IGBT - IXYS

भाग संख्या IXGP30N60B2
समारोह HiPerFAST IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGP30N60B2?> डेटा पत्रक पीडीएफ

IXGP30N60B2 pdf
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCH
IC = 24 A; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 24 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5
Inductive load, TJ = 125°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5
18 26
S
1500
115
40
pF
pF
pF
66 nC
9 nC
22 nC
13
15
110
82
0.32
ns
ns
200 ns
150 ns
0.6 mJ
13
17
0.22
200
150
0.9
ns
ns
mJ
ns
ns
mJ
0.65 K/W
0.25
K/W
IXGPwww3.D0aNtaSh6ee0t4BU.c2om
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

विन्यास 5 पेज
डाउनलोड[ IXGP30N60B2 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGP30N60B2HiPerFAST IGBTIXYS
IXYS


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