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IXGR50N60C2D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFAST IGBT with Diode - IXYS

भाग संख्या IXGR50N60C2D1
समारोह HiPerFAST IGBT with Diode
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGR50N60C2D1?> डेटा पत्रक पीडीएफ

IXGR50N60C2D1 pdf
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IC = 40 A; VCE = 10 V,
Note 1
VCE = 25 V, VGE = 0 V, f = 1 MHz
40 51
3700
290
50
S
pF
pF
pF
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
138 nC
25 nC
40 nC
Inductive load, TJ = 25°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 2.0
Inductive load, TJ = 125°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 2.0
18 ns
25 ns
115 150 ns
48 ns
0.38 0.7 mJ
18
25
1.4
170
60
0.74
ns
ns
mJ
ns
ns
mJ
0.62 K/W
0.15
K/W
IXGR 50N60C2
IXGR 50N60C2D1www.DataSheet4U.com
ISOPLUS 247 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = 60 A, VGE = 0 V,
Note 1
TJ = 150°C
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
2.1 V
1.4
8.3 A
35 ns
0.85 K/W
Note 1: Pulse test, t 300 µs, duty cycle 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

विन्यास 6 पेज
डाउनलोड[ IXGR50N60C2D1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGR50N60C2D1HiPerFAST IGBT with DiodeIXYS
IXYS


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