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IXGR50N60B2D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFAST IGBT ISOPLUS247 - IXYS

भाग संख्या IXGR50N60B2D1
समारोह HiPerFAST IGBT ISOPLUS247
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGR50N60B2D1?> डेटा पत्रक पीडीएफ

IXGR50N60B2D1 pdf
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJ-DCB
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IC = 40 A; VCE = 10 V,
Note 1
VCE= 25 V, VGE = 0 V, f = 1 MHz
40 55
50N60B2
50N60B2D1
3500
240
280
50
S
pF
pF
pF
pF
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
140 nC
23 nC
44 nC
Inductive load, TJ = 25°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 5.0
Inductive load, TJ = 125°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 5.0
(Note 2)
(Note 3)
18
25
190 300
65
0.55 0.85
ns
ns
ns
ns
mJ
18
25
0.9
290
140
1.55
ns
ns
mJ
ns
ns
mJ
0.31 K/W
0.62 K/W
0.15 K/W
IXGR 50N60B2
IXGR 50N60B2D1
www.DataSheet4U.com
ISOPLUS 247 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
min.
otherwise specified)
typ. max.
VF
IRM
trr
RthJC
IF = 60 A, VGE = 0 V,
Note 1
TJ = 150°C
VIFR==6100A0, VVGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
2.0
1.39
8.3
V
A
35 ns
0.85 K/W
Notes 1: Pulse test, t 300 µs, duty cycle 2 %
2: RthJ-DCB is the thermal resistance junction-to-internal side of DCB substrate.
3: RthJC is the thermal resistance junction-to-external side of DCB substrate.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

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डाउनलोड[ IXGR50N60B2D1 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
IXGR50N60B2D1HiPerFAST IGBT ISOPLUS247IXYS
IXYS


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