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IXGR40N60B2D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFAST IGBT ISOPLUS247 - IXYS

भाग संख्या IXGR40N60B2D1
समारोह HiPerFAST IGBT ISOPLUS247
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGR40N60B2D1?> डेटा पत्रक पीडीएफ

IXGR40N60B2D1 pdf
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = 30 A; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
20 36
S
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 30 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = 3.3
Inductive load, TJ = 125°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = 3.3
2560
210
54
pF
pF
pF
100 nC
15 nC
36 nC
18 ns
20 ns
130 200 ns
82 150 ns
0.4 0.8 mJ
18
20
0.3
240
150
1.10
ns
ns
mJ
ns
ns
mJ
0.75 K/W
0.15
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = 30 A, VGE = 0 V, Pulse test
TJ =150°C
1.6 V
t 300 µs, duty cycle d 2 %
2.5 V
IRM
trr
RthJC
IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C
VR = 100 V
TJ = 100°C
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
100
25
0.9
4A
ns
ns
1.1 K/W
IXGR 40N60B2
IXGR 40N60B2D1
www.DataSheet4U.com
ISOPLUS 247 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585

विन्यास 6 पेज
डाउनलोड[ IXGR40N60B2D1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGR40N60B2D1HiPerFAST IGBT ISOPLUS247IXYS
IXYS


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