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IXGX32N170AH1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage IGBT with Diode - IXYS

भाग संख्या IXGX32N170AH1
समारोह High Voltage IGBT with Diode
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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<?=IXGX32N170AH1?> डेटा पत्रक पीडीएफ

IXGX32N170AH1 pdf
IXGX 32N170AH1
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC25; VCE = 10 V
Note 2
VCE = 25 V, VGE = 0 V, f = 1 MHz
16 23
3500
310
40
S
pF
pF
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
155 nC
30 nC
51 nC
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V
RG = 2.7 Ω, VCE = 0.5 VCES
46 ns
57 ns
260 500 ns
50 100 ns
2.5 4.2 mJ
www.DataSheet4U.com
PLUS247 Outline (IXGX)
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
RG = 2.7 Ω, VCE = 0.5 VCES
48 ns
59 ns
4.0 mJ
300 ns
70 ns
3.0 mJ
0.35 K/W
0.15
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = 60A, VGE = 0 V, Pulse test,
t 300 µs, duty cycle d 2 %
2.4 2.7 V
TJ = 125°C 2.4
V
IF = 60A, VGE = 0 V, -diF/dt = 600 A/µs
VR = 1200 V
TJ = 125°C
50
55
150
A
A
ns
TJ = 125°C 350
ns
0.35 K/W
Notes: 1.
2.
3.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t 300 µs, duty cycle 2 %
See DH60-18A and IXGH32N170A datasheets for additional
characteristics
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692

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डाउनलोड[ IXGX32N170AH1 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGX32N170AH1High Voltage IGBT with DiodeIXYS
IXYS


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