DataSheet.in

IXSH30N60B2D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Speed IGBT with Diode - IXYS

भाग संख्या IXSH30N60B2D1
समारोह High Speed IGBT with Diode
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXSH30N60B2D1?> डेटा पत्रक पीडीएफ

IXSH30N60B2D1 pdf
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 24A; VCE = 10 V, Note 1
VCE = 25 V, VGE = 0 V
f = 1 MHz
20N60B2D1
7.0 12.0
1220
110
140
42
IC = 24A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 24A, VGE = 15 V
VCE = 400 V, RG = 5
Switching
(Clamp) >
times may
0.8 • VCES,
increase
higher TJ
for
or
VCE
increased RG
50
23
15
30
30
130
140
0.55
Inductive load, TJ = 125°C
IC = 24 A, VGE = 15 V
20N60B2
VSwCEit=ch4i0n0g
Vtim, ReGs
=5
may increase
for
20N60B2D1
oVrCEin(cCrleaamspe)d
> 0.8
RG
VCES,
higher
TJ
30
50
0.32
0.82
202
234
1.18
S
pF
pF
pF
pF
nC
nC
nC
ns
ns
280 ns
300 ns
1.0 mJ
ns
ns
mJ
mJ
ns
ns
mJ
0.50 K/W
0.21
K/W
IXSH 30N60B2D1
IXSTwww3.D0aNta6Sh0eeBt42U.Dco1m
TO-247 (IXSH) Outline
123
Terminals: 1 - Gate
2 - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
TO-268 (IXST) Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = 30A, VGE = 0 V
TJ =150°C
1.6 V
2.5 V
IRM
IF = 50A, VGE = 0 V, -diF/dt = 100 A/µs
TJ = 100°C 2.0 2.5 A
trr VR = 100 V
TJ = 100°C 150
ns
trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
RthJC
Note 1: Pulse test, t 300 µs, duty cycle d 2 %
30 ns
0.9 K/W
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692

विन्यास 6 पेज
डाउनलोड[ IXSH30N60B2D1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXSH30N60B2D1High Speed IGBT with DiodeIXYS
IXYS


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English