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IXSH10N60B2D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Speed IGBT with Diode - IXYS

भाग संख्या IXSH10N60B2D1
समारोह High Speed IGBT with Diode
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXSH10N60B2D1?> डेटा पत्रक पीडीएफ

IXSH10N60B2D1 pdf
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 10A; VCE = 10 V, Note 1
VCE = 25 V, VGE = 0 V
f = 1 MHz
IC = 10A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 10A, VGE = 15 V
VCE = 0.8 VCES, RG = 30
Switching
(Clamp) >
times may
0.8 • VCES,
increase
higher TJ
for
or
VCE
increased RG
Inductive load, TJ = 125°C
IC = 10 A, VGE = 15 V
VSwCEit=ch0in.8gVtiCmESe, sRmG =ay3i0ncrease for
oVrCEin(cCrleaamspe)d
> 0.8
RG
VCES,
higher
TJ
2.0 3.6
S
400 pF
50 pF
11
17
6
7.5
30
30
180
165
430
30
30
0.32
260
270
790
pF
nC
nC
nC
ns
ns
ns
ns
750 µJ
ns
ns
mJ
ns
ns
µJ
1.25 K/W
0.25
K/W
IXSH 10N60B2D1
IXSQwww1.D0aNta6Sh0eeBt42U.Dco1m
TO-247 Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = 10A, VGE = 0 V
TJ =150°C
1.66 V
2.66 V
IRM
IF = 12A, VGE = 0 V, -diF/dt = 100 A/µs
TJ = 100°C 1.5
trr VR = 100 V
TJ = 100°C 90
A
ns
trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
RthJC
Note 1: Pulse test, t 300 µs, duty cycle d 2 %
25 ns
2.5 K/W
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585

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डाउनलोड[ IXSH10N60B2D1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXSH10N60B2D1High Speed IGBT with DiodeIXYS
IXYS


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