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IXGR32N170AH1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage IGBT - IXYS

भाग संख्या IXGR32N170AH1
समारोह High Voltage IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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IXGR32N170AH1 pdf
IXGR 32N170AH1
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
IC = IC25; VCE = 10 V
Note 2
VCE = 25 V, VGE = 0 V, f = 1 MHz
25 33
3700
180
44
S
pF
pF
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
RG = 2.7 Ω, VCE = 0.8 VCES
Note 3
155 nC
30 nC
51 nC
46 ns
57 ns
270 500 ns
50 100 ns
1.5 3.0 mJ
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ISOPLUS247 Outline
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
RG = 2.7 Ω, VCE = 0.8 VCES
Note 3
48 ns
42 ns
2.5 mJ
300 ns
70 ns
2.4 mJ
0.65 K/W
0.15
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = 20A, VGE = 0 V, Note 2
IF = 50A, VGE = 0 V, -diF/dt = 800 A/µs
VR = 600 V
2.7 V
50 A
150 ns
1.5 K/W
See IXGX32N170AH1 for
charcteristic curves
Notes: 1.
2.
3.
4.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t 300 µs, duty cycle 2 %
Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
iSnecereDasHe6d0-R1G8.A and IXGH32N170A datasheets for additional
characteristics
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692

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डाउनलोड[ IXGR32N170AH1 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGR32N170AH1High Voltage IGBTIXYS
IXYS


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