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IXGR16N170AH1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage IGBT with Diode - IXYS

भाग संख्या IXGR16N170AH1
समारोह High Voltage IGBT with Diode
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGR16N170AH1?> डेटा पत्रक पीडीएफ

IXGR16N170AH1 pdf
IXGR 16N170AH1
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC25; VCE = 10 V
Note 2
VCE = 25 V, VGE = 0 V, f = 1 MHz
6 10
1700
125
30
S
pF
pF
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V
RG = 10 Ω, VCE = 0.5 VCES
Note 3
65 nC
13 nC
24 nC
36 ns
57 ns
200 350 ns
40 150 ns
0.9 1.5 mJ
www.DataSheet4U.com
ISOPLUS247 Outline
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
RG = 10 Ω, VCE = 0.5 VCES
Note 3
38 ns
59 ns
1.5 mJ
200 ns
55 ns
1.1 mJ
1.04 K/W
0.15
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = 20A, VGE = 0 V, Note 2
IF = 50A, VGE = 0 V, -diF/dt = 800 A/µs
VR = 600 V
2.7 V
50 A
150 ns
1.5 K/W
Notes: 1.
2.
3.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t 300 µs, duty cycle 2 %
Switching
increased
times
RG.
may
increase
for
VCE
(Clamp)
>
0.8
VCES,
higher
TJ
or
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692

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डाउनलोड[ IXGR16N170AH1 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGR16N170AH1High Voltage IGBT with DiodeIXYS
IXYS


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