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IXFV30N60PS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PolarHV HiPerFET Power MOSFET - IXYS

भाग संख्या IXFV30N60PS
समारोह PolarHV HiPerFET Power MOSFET
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFV30N60PS?> डेटा पत्रक पीडीएफ

IXFV30N60PS pdf
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
IXFH 30N60P IXFV 30N60P
IXFV 30N60PS IXFT 30N60P
Test Conditions
Characteristic Values
(TJ
=
25°C
unless
Min.
otherwise specified)
Typ. Max.
www.DataSheet4U.com
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 ID25
RG = 4 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
TO-247, PLUS220
15 27
S
4000
430
42
pF
pF
pF
29 ns
20 ns
80 ns
25 ns
145 nC
30 nC
75 nC
0.25 K/W
0.21
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
30 A
80 A
1.5 V
trr IF = 25A, -di/dt = 100 A/µs
QRM VR = 100V
250 ns
0.8 µC
30
27
24
21
18
15
12
9
6
3
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6.5V
6V
5.5V
5V
1234567
VD S - Volts
8
Fig. 2. Extended Output Characteristics
@ 25ºC
60
55 VGS = 10V
50 8V
7V
45
40
6.5V
35
30
25
20 6V
15
10 5.5V
5 5V
0
0 3 6 9 1V2D S1-5 Vo1l8ts 21 24 27 30
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692

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डाउनलोड[ IXFV30N60PS Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFV30N60PPolarHV HiPerFET Power MOSFETIXYS
IXYS
IXFV30N60PSPolarHV HiPerFET Power MOSFETIXYS
IXYS


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