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IXFV30N50PS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PolarHV Power HiPerFET MOSFET - IXYS

भाग संख्या IXFV30N50PS
समारोह PolarHV Power HiPerFET MOSFET
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFV30N50PS?> डेटा पत्रक पीडीएफ

IXFV30N50PS pdf
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
IXFH 30N50P IXFQ 30N50P IXFT 30N50P
IXFV 30N50P IXFV 30N50PS
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
Typ. Max.
VDS= 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
17 27
4150
445
28
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 5 (External)
25 ns
27 ns
75 ns
21 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
70 nC
27 nC
22 nC
(TO-247, PLUS220, TO-3P)
0.21
0.23 K/W
K/W
www.DataSheet4U.com
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise
typ.
specified)
Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
30 A
90 A
1.5 V
trr IF = 25 A; -di/dt = 100 A/µs
IRM VR = 100 V; VGS = 0 V
QRM
150 250 ns
6A
0.6 µC
Characteristic Curves
Fig. 1. Output Characteristics
@ 25ºC
30
27 VGS = 10V
8V
24
Fig. 2. Extended Output Characteristics
@ 25ºC
70
VGS = 10V
60 8V
21 7V 50
18 7V
40
15
12 30
9 6V 20
6
3 10 6V
0
0 12 3 4 56 7
VD S - Volts
0
0
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
3 6 9 12 15 18 21 24 27 30
VD S - Volts
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692

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डाउनलोड[ IXFV30N50PS Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFV30N50PPolarHV Power HiPerFET MOSFETIXYS
IXYS
IXFV30N50PSPolarHV Power HiPerFET MOSFETIXYS
IXYS


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