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IRG4P254S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Standard Speed IGBT - International Rectifier

भाग संख्या IRG4P254S
समारोह Standard Speed IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG4P254S?> डेटा पत्रक पीडीएफ

IRG4P254S pdf
IRG4P254S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 250 — —
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 — —
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.33
1.32 1.5
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 55A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance U
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
1.69 V IC =98A
See Fig.2, 5
1.31
IC =55A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-12 mV/°C VCE = VGE, IC = 250µA
43 63 S VCE = 100V, IC = 55A
— — 250 µA VGE = 0V, VCE = 250V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 250V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ. Max.
200 300
29 44
66 99
40
44
270 400
510 760
0.38
3.50
3.88 5.3
38
45
400
940
6.52
13
4500
510
100
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC =55A
VCC = 200V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 55A, VCC = 200V
VGE = 15V, RG = 5.0
Energy losses include "tail"
See Fig. 9, 10, 14
TJ = 150°C,
IC = 55A, VCC = 200V
VGE = 15V, RG = 5.0
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com

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