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APT31N80JC3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Super Junction MOSFET - Microsemi

भाग संख्या APT31N80JC3
समारोह Super Junction MOSFET
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
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APT31N80JC3 pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy 6
www.DataEShoeffet4U.Tcourmn-off Switching Energy
Eon Turn-on Switching Energy 6
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 400V
ID = 31A @ 25°C
RESISTIVE SWITCHING
VGS = 10V
VDD = 400V
ID = 31A @ 125°C
RG = 2.5
INDUCTIVE SWITCHING @ 25°C
VDD = 533V, VGS = 15V
ID = 31A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 533V, VGS = 15V
ID = 31A, RG = 5
APT31N80JC3
MIN TYP MAX UNIT
4510
2050
110
pF
180 355
22 nC
90
25
15
70 80 ns
69
615
530
1025
µJ
580
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -31A)
t rr Reverse Recovery Time (IS = -31A, dlS/dt = 100A/µs, VR = 400V)
Q rr Reverse Recovery Charge (IS = -31A, dlS/dt = 100A/µs, VR = 400V)
dv/dt Peak Diode Recovery dv/dt 5
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
31
93 Amps
1 1.2 Volts
855 ns
30 µC
6 V/ns
MIN TYP MAX UNIT
0.37
62
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 115.92mH, RG = 25, Peak IL = 3.4A
5 IS = -31A di/dt = 100A/µs VR = 480V TJ = 125°C
6 Eon includes diode reverse recovery. See figures 18, 20.
3 See MIL-STD-750 Method 3471
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.40
0.35 0.9
0.30
0.7
0.25
0.20
0.15
0.10
0.05
0
10-5
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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डाउनलोड[ APT31N80JC3 Datasheet.PDF ]


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