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APT31N60SCS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Super Junction MOSFET - Advanced Power Technology

भाग संख्या APT31N60SCS
समारोह Super Junction MOSFET
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
1 Page
		
<?=APT31N60SCS?> डेटा पत्रक पीडीएफ

APT31N60SCS pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 5
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
tf Fall Time
Eon Turn-on Switching Energy 6
Eoff Turn-off Switching Energy
www.DataEShoneet4U.Tcuormn-on Switching Energy 6
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 400V
ID = 18A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 400V
ID = 18A @ 25°C
RG = 3.3
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 18A, RG = 4.3
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
ID = 18A, RG = 4.3
MIN
APT31N60B_SCS(G)
TYP MAX UNIT
3055
3260
pF
28
65 85
14 nC
22
10
5 ns
110
5
290
125 µJ
170
100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 4 (VGS = 0V, IS = -18A)
t rr Reverse Recovery Time (IS = -18A, dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -18A, dlS/dt = 100A/µs)
dv/dt Peak Diode Recovery dv/dt 7
18 Amps
93
1.2 Volts
450 ns
12 µC
4 V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.5
62 °C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See figures 18, 20.
2 Repetitive avalanche causes additional power losses that can
be calculated as PAV = EAR*f
3 Starting Tj = +25°C, L = 33.23mH, RG = 25, Peak IL = 11A
4 Pulse Test: Pulse width < 380µs, Duty Cycle < 2%
7 We do not recommend using this CoolMOS™ product in topologies
that have fee wheeling load current conducted in the body diode that is
hard commutated. The current commutation is very "snappy", resulting in
high di/dt at the completion of commutation, and the likelihood of severe
over-voltage transients due to the resulting high dv/dt.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.60
0.50
D = 0.9
0.40
0.7
0.30
0.5
Note:
0.20
0.3
t1
t2
0.10
0.1
0 0.05
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-5
10-4
10-3
10-2
10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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डाउनलोड[ APT31N60SCS Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
APT31N60SCSSuper Junction MOSFETAdvanced Power Technology
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