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APT30M61SFLL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOS 7 FREDFET - Advanced Power Technology

भाग संख्या APT30M61SFLL
समारोह POWER MOS 7 FREDFET
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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APT30M61SFLL pdf
DYNAMIC CHARACTERISTICS
APT30M61BFLL - SFLL
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy 6
Eoff Turn-off Switching Energy
www.DataSEhoenet4U.cToumrn-on Switching Energy 6
Eoff Turn-off Switching Energy
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 150V
ID = 54A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 150V
ID = 54A @ 25°C
RG = 0.6
INDUCTIVE SWITCHING @ 25°C
VDD = 200V, VGS = 15V
ID = 54A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 200V VGS = 15V
ID = 54A, RG = 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -54A)
dv/dt Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -54A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr (IS = -54A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Peak Recovery Current
IRRM (IS = -54A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
MIN
MIN
TYP
3720
920
41
64
23
26
12
20
36
13
367
319
451
348
MAX
UNIT
pF
nC
ns
µJ
TYP MAX UNIT
54 Amps
216
1.3 Volts
8 V/ns
225
ns
400
1.0
µC
4.2
10
Amps
20
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.31
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.89mH, RG = 25, Peak IL = 54A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID54A di/dt 700A/µs VR 300 TJ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30 0.9
0.25
0.20
0.15
0.10
0.05
0
10-5
0.7
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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भाग संख्याविवरणविनिर्माण
APT30M61SFLLPOWER MOS 7 FREDFETAdvanced Power Technology
Advanced Power Technology


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