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APT34N80B2C3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Super Junction MOSFET - Advanced Power Technology

भाग संख्या APT34N80B2C3
समारोह Super Junction MOSFET
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
1 Page
		
<?=APT34N80B2C3?> डेटा पत्रक पीडीएफ

APT34N80B2C3 pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
tf Fall Time
Eon Turn-on Switching Energy 6
www.DataEShoeffet4U.Tcuormn-off Switching Energy
Eon Turn-on Switching Energy 6
Eoff Turn-off Switching Energy
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 400V
ID = 34A @ 25°C
RESISTIVE SWITCHING
VGS = 10V
VDD = 400V
ID = 34A @ 125°C
RG = 2.5
INDUCTIVE SWITCHING @ 25°C
VDD = 533V, VGS = 15V
ID = 34A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 533V, VGS = 15V
ID = 34A, RG = 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -34A)
t rr Reverse Recovery Time (IS = -34A, dlS/dt = 100A/µs, VR = 400V)
Q rr Reverse Recovery Charge (IS = -34A, dlS/dt = 100A/µs, VR = 400V)
dv/dt Peak Diode Recovery dv/dt 5
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
APT34N80B2C3 _LC3
MIN TYP MAX UNIT
4510
2050
110
pF
180 355
22 nC
90
25
15
70 80 ns
69
675
580
1145
µJ
670
MIN TYP MAX UNIT
34
102 Amps
1 1.2 Volts
855 ns
30 µC
6 V/ns
MIN TYP MAX UNIT
.30
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 115.92mH, RG = 25, Peak IL = 3.4A
5 IS = -34A di/dt = 100A/µs VR = 480V TJ = 125°C
6 Eon includes diode reverse recovery. See figures 18, 20.
3 See MIL-STD-750 Method 3471
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10-5
0.9
0.7
0.5
Note:
0.3 t1
0.1
0.05 SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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डाउनलोड[ APT34N80B2C3 Datasheet.PDF ]


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