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APT34M60S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel FREDFET - Microsemi

भाग संख्या APT34M60S
समारोह N-Channel FREDFET
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
1 Page
		
<?=APT34M60S?> डेटा पत्रक पीडीएफ

APT34M60S pdf
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
600
∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance 3
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 17A
VGS(th)
∆VGS(th)/∆TJ
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = VDS, ID = 1mA
3
IDSS Zero Gate Voltage Drain Current
VDS = 600V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
Dynamic Characteristics
Symbol Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
www.DataSCheoses t4U.coOmutput Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 17A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 400V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 17A,
VDS = 300V
Resistive Switching
VDD = 400V, ID = 17A
RG = 4.7Ω 6 , VGG = 15V
Typ
0.57
0.17
4
-10
APT34M60B_S
Max Unit
V
V/°C
0.21 Ω
5V
mV/°C
100
500
µA
±100 nA
Typ Max Unit
32 S
6640
70
610
325 pF
170
165
36 nC
70
37
43 ns
115
34
Source-Drain Diode Characteristics
Symbol Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 1
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 17A, TJ = 25°C, VGS = 0V
ISD = 17A 3
diSD/dt = 100A/µs, TJ = 25°C
ISD ≤ 17A, di/dt ≤1000A/µs, VDD = 400V,
TJ = 125°C
Min
Typ Max Unit
100
A
124
1
570
11.8
V
ns
µC
8 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 6.44mH, RG = 4.7Ω, IAS = 17A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -8.03E-8/VDS^2 + 2.80E-8/VDS + 9.89E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.

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