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APT38F80B2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel FREDFET - Microsemi

भाग संख्या APT38F80B2
समारोह N-Channel FREDFET
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
1 Page
		
<?=APT38F80B2?> डेटा पत्रक पीडीएफ

APT38F80B2 pdf
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
800
∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance 3
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 20A
VGS(th)
∆VGS(th)/∆TJ
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = VDS, ID = 2.5mA
3
IDSS Zero Gate Voltage Drain Current
VDS = 800V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
Typ
0.87
0.23
4
-10
APT38F80B2_L
Max Unit
V
V/°C
0.28 Ω
5V
mV/°C
250
1000
µA
±100 nA
Dynamic Characteristics
Symbol Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
www.DataSCheoses t4U.coOmutput Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 20A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 533V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 20A,
VDS = 400V
Resistive Switching
VDD = 533V, ID = 20A
RG = 2.2Ω 6 , VGG = 15V
Typ
38
8070
140
805
380
190
260
44
135
46
65
200
60
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
Test Conditions
Min Typ Max Unit
IS
ISM
VSD
trr
Qrr
Irrm
dv/dt
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 20A, TJ = 25°C, VGS = 0V
TJ = 25°C
ISD = 20A 3
TJ = 125°C
TJ = 25°C
VDD = 100V
diSD/dt = 100A/µs
TJ = 125°C
TJ = 25°C
TJ = 125°C
ISD ≤ 20A, di/dt ≤1000A/µs, VDD = 533V,
TJ = 125°C
38
A
150
1.1
250 300
485 600
2
6.7
13
22
V
ns
µC
A
20 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 8.55mH, RG = 2.2Ω, IAS = 20A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -2.17E-7/VDS^2 + 2.63E-8/VDS + 3.74E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.

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