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IS42VS16100C1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM - Integrated Silicon Solution

भाग संख्या IS42VS16100C1
समारोह 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
मैन्युफैक्चरर्स Integrated Silicon Solution 
लोगो Integrated Silicon Solution लोगो 
पूर्व दर्शन
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IS42VS16100C1 pdf
IS42VS16100C1
ISSI ®
www.DataSheet4U.com
PIN FUNCTIONS
Pin No.
20 to 24
27 to 32
Symbol
A0-A10
Type
Input Pin
19 A11 Input Pin
16 CAS Input Pin
34 CKE Input Pin
35 CLK Input Pin
18 CS Input Pin
2, 3, 5, 6, 8, 9, 11 DQ0 to
12, 39, 40, 42, 43, DQ15
45, 46, 48, 49
14, 36
LDQM,
UDQM
DQ Pin
Input Pin
17 RAS Input Pin
15 WE Input Pin
7, 13, 38, 44
1, 25
4, 10, 41, 47
26, 50
VDDQ
VDD
GNDQ
GND
Power Supply Pin
Power Supply Pin
Power Supply Pin
Power Supply Pin
Function (In Detail)
A0 to A10 are address inputs. A0-A10 are used as row address inputs during active
command input and A0-A7 as column address inputs during read or write command
input. A10 is also used to determine the precharge mode during other commands. If
A10 is LOW during precharge command, the bank selected by A11 is precharged,
but if A10 is HIGH, both banks will be precharged.
When A10 is HIGH in read or write command cycle, the precharge starts
automatically after the burst access.
These signals become part of the OP CODE during mode register set command
input.
A11 is the bank selection signal. When A11 is LOW, bank 0 is selected and when
high, bank 1 is selected. This signal becomes part of the OP CODE during mode
register set command input.
CAS, in conjunction with the RAS and WE, forms the device command. See the
“Command Truth Table” item for details on device commands.
The CKE input determines whether the CLK input is enabled within the device. When
is CKE HIGH, the next rising edge of the CLK signal will be valid, and when LOW,
invalid. When CKE is LOW, the device will be in either the power-down mode, the
clock suspend mode, or the self refresh mode. The CKE is an asynchronous input.
CLK is the master clock input for this device. Except for CKE, all inputs to this device
are acquired in synchronization with the rising edge of this pin.
The CS input determines whether command input is enabled within the device.
Command input is enabled when CS is LOW, and disabled with CS is HIGH. The
device remains in the previous state when CS is HIGH.
DQ0 to DQ15 are DQ pins. DQ through these pins can be controlled in byte units
using the LDQM and UDQM pins.
LDQM and UDQM control the lower and upper bytes of the DQ buffers. In read
mode, LDQM and UDQM control the output buffer. When LDQM or UDQM is LOW,
the corresponding buffer byte is enabled, and when HIGH, disabled. The outputs go
to the HIGH impedance state when LDQM/UDQM is HIGH. This function
corresponds to OE in conventional DRAMs. In write mode, LDQM and UDQM control
the input buffer. When LDQM or UDQM is LOW, the corresponding buffer byte is
enabled, and data can be written to the device. When LDQM or UDQM is HIGH, input
data is masked and cannot be written to the device.
RAS, in conjunction with CAS and WE, forms the device command. See the
“Command Truth Table” item for details on device commands.
WE, in conjunction with RAS and CAS, forms the device command. See the
“Command Truth Table” item for details on device commands.
VDDQ is the output buffer power supply.
VDD is the device internal power supply.
GNDQ is the output buffer ground.
GND is the device internal ground.
2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
04/15/05

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भाग संख्याविवरणविनिर्माण
IS42VS16100C1512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAMIntegrated Silicon Solution
Integrated Silicon Solution


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