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IXFV26N60P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated - IXYS Corporation

भाग संख्या IXFV26N60P
समारोह N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFV26N60P?> डेटा पत्रक पीडीएफ

IXFV26N60P pdf
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
IXFV 26N60P
IXFH 26N60P IXFQ 26N60P
IXFV 26N60PS IXFT 26N60P
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Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
16 26
4150
400
27
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 ID25
RG = 5 (External)
25 ns
27 ns
75 ns
21 ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
72 nC
27 nC
24 nC
TO-3P, PLUS220 & TO-247
0.27 K/W
0.21 K/W
24
20
16
12
8
4
0
0
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
Typ. Max.
IS VGS = 0 V
26 A
ISM Repetitive
78 A
VSD IF = IS, VGS = 0 V, pulse test
1.5 V
trr IF = 25A, -di/dt = 100 A/µs
IRM VR = 100V; VGS = 0 V
QRM
Characteristic Curves
150 250 ns
7A
0.7 µC
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
VGS = 10V
7V
60
54 VGS = 10V
7V
48
42
36
6V 30
24
18
6V
5V
123 4567
VD S - Volts
12
5V
6
0
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692

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डाउनलोड[ IXFV26N60P Datasheet.PDF ]


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