DataSheet.in

IRG4PC50FDPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PC50FDPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRG4PC50FDPBF?> डेटा पत्रक पीडीएफ

IRG4PC50FDPBF pdf
IRG4PC50FDPbF
www.DataSheet4U.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Parameter
Min.
Collector-to-Emitter Breakdown VoltageS 600
Temperature Coeff. of Breakdown Voltage ----
Collector-to-Emitter Saturation Voltage ----
----
----
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance T
21
Zero Gate Voltage Collector Current
----
----
Diode Forward Voltage Drop
----
----
Gate-to-Emitter Leakage Current
----
Typ.
----
0.62
1.45
1.79
1.53
----
-14
30
----
----
1.3
1.2
----
Max. Units
---- V
---- V/°C
1.6
---- V
----
6.0
---- mV/°C
---- S
250 µA
6500
1.7 V
1.5
±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 39A
VGE = 15V
IC = 70A
See Fig. 2, 5
IC = 39A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 39A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 25A
See Fig. 13
IC = 25A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min.
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
Typ. Max.
190 290
28 42
65 97
55 ----
25 ----
240 360
140 210
1.5 ----
2.4 ----
3.9 5.0
59 ----
27 ----
400 ----
260 ----
6.5 ----
13 ----
4100 ----
250 ----
49 ----
50 75
105 160
4.5 10
8.0 15
112 375
420 1200
250 ----
160 ----
Units
nC
ns
mJ
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 39A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 39A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 39A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 25A
TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
2 www.irf.com

विन्यास 11 पेज
डाउनलोड[ IRG4PC50FDPBF Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG4PC50FDPBFINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English