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AOP609 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Complementary Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors

भाग संख्या AOP609
समारोह Complementary Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOP609?> डेटा पत्रक पीडीएफ

AOP609 pdf
AOP609
www.DataSheet4U.com
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
IDSS Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
TJ=55°C
1
5
µA
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
250 µA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.5 2.4
3
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=4.7A
TJ=125°C
49
65
60 m
VGS=4.5V, ID=3.0A
57 75 m
gFS Forward Transconductance
VDS=5V, ID=4.7A
17 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.78 1
V
IS Maximum Body-Diode Continuous Current
3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=4.7A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=6,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4.7A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=4.7A, dI/dt=100A/µs
474 570
157
60
1.65 2
5.1 7
2.5 3
1
1.4
5.4
5.5
17.2
2.9
25.4 35
29.4
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 1 : December 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.

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