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IRG4PC40KDPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PC40KDPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4PC40KDPBF pdf
IRG4PC40KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance „
Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
600 — — V VGE = 0V, IC = 250µA
— 0.46 — V/°C VGE = 0V, IC = 1.0mA
— 2.10 2.6
IC = 25A
VGE = 15V
— 2.70 — V IC = 42A
See Fig. 2, 5
— 2.14 —
IC = 25A, TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -13 — mV/°C VCE = VGE, IC = 250µA
7.0 14 — S VCE = 100V, IC = 25A
— — 250 µA VGE = 0V, VCE = 600V
— — 3500
VGE = 0V, VCE = 600V, TJ = 150°C
— 1.3 1.7 V IC = 15A
See Fig. 13
— 1.2 1.6
IC = 15A, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
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td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
120 180
16 24
51 77
53 —
33 —
110 160
100 150
0.95 —
0.76 —
1.71 2.3
——
52
37
220
140
2.67
13
1600
130
55
42
74
4.0
6.5
80
220
188
160
—
—
—
—
—
—
—
—
—
60
120
6.0
10
180
600
—
—
Units
nC
ns
mJ
µs
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 25A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC = 25A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail"
See Fig. 9,10,14
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10, VCPK < 500V
TJ = 150°C,
IC = 25A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail"
See Fig. 11,14
Measured 5mm from package
VGE = 0V
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 15A
TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt = 200Aµs
TJ = 25°C See Fig.
TJ = 125°C 17
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