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APT40DC60HJ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SiC Diode Full Bridge Power Module - Microsemi

भाग संख्या APT40DC60HJ
समारोह SiC Diode Full Bridge Power Module
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
1 Page
		
<?=APT40DC60HJ?> डेटा पत्रक पीडीएफ

APT40DC60HJ pdf
APT40DC60HJ
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
VF Diode Forward Voltage
IRM Maximum Reverse Leakage Current
QC Total Capacitive Charge
C Total Capacitance
Test Conditions
Min Typ Max Unit
IF = 40A
VR = 600V
Tj = 25°C
Tj = 175°C
Tj = 25°C
Tj = 175°C
1.6 1.8
2 2.4
V
200 800 µA
400 4000
IF = 40A, VR = 300V
di/dt =1200A/µs
56 nC
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
260 pF
200
Thermal and package characteristics
Symbol Characteristic
RthJC
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Case Thermal resistance
Junction to Ambient
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
Min Typ
2500
-55
29.2
Max Unit
0.7 °C/W
20
V
175
300
°C
1.5 N.m
g
SOT-227 (ISOTOP®) Package Outline
www.DataSheet4U.com
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
25.2 (0.992)
25.4 (1.000)
3.30 (.130) 12.6 (.496)
4.57 (.180) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
Dimensions in Millimeters and (Inches)
www.microsemi.com
2-3

विन्यास 3 पेज
डाउनलोड[ APT40DC60HJ Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
APT40DC60HJSiC Diode Full Bridge Power ModuleMicrosemi
Microsemi


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