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P10NB20FP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STP10NB20FP - STMicroelectronics

भाग संख्या P10NB20FP
समारोह STP10NB20FP
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=P10NB20FP?> डेटा पत्रक पीडीएफ

P10NB20FP pdf
STP10NB20/FP
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.47
T O22 0 FP
4.17
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e
10
150
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
200
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
S ymb ol
P a ra m et er
Test Conditions
VGS(th) Gate Threshold
Voltage
VDS = VGS ID = 250 µA
RDS(on) Static Drain-source On VGS = 10V ID = 5 A
www.DataSheet4U.com Resistance
ID(o n)
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
3
Typ .
4
Max.
5
Unit
V
0.30 0.40
10 A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =5 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
3
Typ .
4
Max.
Unit
S
470 650
135 190
22 30
pF
pF
pF
2/9

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डाउनलोड[ P10NB20FP Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
P10NB20FPSTP10NB20FPSTMicroelectronics
STMicroelectronics


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