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IPB80N08S2L-07 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power-Transistor - Infineon Technologies

भाग संख्या IPB80N08S2L-07
समारोह Power-Transistor
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
1 Page
		
<?=IPB80N08S2L-07?> डेटा पत्रक पीडीएफ

IPB80N08S2L-07 pdf
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
IPB80N08S2L-07
IPP80N08S2L-07
min.
Values
typ.
Unit
max.
- - 0.5 K/W
- - 62
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
75
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1.2
1.6
2.0
Zero gate voltage drain current
I DSS
V DS=75 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=75 V, V GS=0 V,
T j=125 °C2)
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=4.5 V, I D=80 A
-
-
-
1 100
1 100 nA
6.6 9 mW
V GS=4.5 V, I D=80 A,
SMD version
-
6.3 8.7
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=80 A
- 5.1 7.1 mΩ
V GS=10 V, I D=80 A,
SMD version
-
4.8 6.8
Rev. 1.1
page 2
2014-03-07

विन्यास 9 पेज
डाउनलोड[ IPB80N08S2L-07 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IPB80N08S2L-07Power-TransistorInfineon Technologies
Infineon Technologies


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