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IPB80N06S3L-08 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power-Transistor - Infineon Technologies

भाग संख्या IPB80N06S3L-08
समारोह Power-Transistor
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
1 Page
		
<?=IPB80N06S3L-08?> डेटा पत्रक पीडीएफ

IPB80N06S3L-08 pdf
IPB80N06S3L-08
IPI80N06S3L-08, IPP80N06S3L-08
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 1.4 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area5)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=55 µA 1.2 1.7 2.2
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
V DS=55 V, V GS=0 V,
T j=125 °C2)
-
1 100
Gate-source leakage current
www.DatDaSraheine-ts4Uo.ucrocme on-state resistance
I GSS
R DS(on)
V GS=16 V, V DS=0 V
V GS=5 V, I D=29 A
- 1 100 nA
- 11.5 14.2 m
V GS=5 V, I D=29 A,
SMD version
- 11.2 13.9
V GS=10 V, I D=43 A
- 6.5 7.9
V GS=10 V, I D=43 A,
SMD version
-
6.2 7.6
Rev. 1.0
page 2
2005-09-16

विन्यास 8 पेज
डाउनलोड[ IPB80N06S3L-08 Datasheet.PDF ]


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