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IPB80N06S3L-06 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power-Transistor - Infineon Technologies

भाग संख्या IPB80N06S3L-06
समारोह Power-Transistor
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
1 Page
		
<?=IPB80N06S3L-06?> डेटा पत्रक पीडीएफ

IPB80N06S3L-06 pdf
IPB80N06S3L-06
IPI80N06S3L-06, IPP80N06S3L-06
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 1.1 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area4)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=80 µA 1.2 1.7 2.2
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=55 V, V GS=0 V,
T j=125 °C2)
I GSS
V GS=16 V, V DS=0 V
R DS(on) V GS=5 V, I D=38 A
-
-
-
1 100
1 100 nA
8.3 10.4 m
V GS=5 V, I D=38 A,
SMD version
- 8.0 10.1
V GS=10 V, I D=56 A
- 4.9 5.9
V GS=10 V, I D=56 A,
SMD version
-
4.6 5.6
Rev. 1.1
page 2
2007-11-07

विन्यास 9 पेज
डाउनलोड[ IPB80N06S3L-06 Datasheet.PDF ]


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