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IRG4RC10UD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4RC10UD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4RC10UD pdf
IRG4RC10UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance T
ICES Zero Gate Voltage Collector Current
3.0
2.8
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
—— V
0.54 V/°C
2.15 2.6
2.61 V
2.30
6.0
-8.7 mV/°C
4.2 S
250 µA
1000
1.5 1.8 V
1.4 1.7
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 5.0A
VGE = 15V
IC = 8.5A
See Fig. 2, 5
IC = 5.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 5.0A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 4.0A
See Fig. 13
IC = 4.0A, TJ = 125°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
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Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min.
Typ. Max. Units
15 22
2.6 4.0 nC
5.8 8.7
40
16 ns
87 130
140 210
0.14
0.12 mJ
0.26 0.33
38
18 ns
95
250
0.45 mJ
7.5 nH
270
21 pF
3.5
28 42 ns
38 57
2.9 5.2 A
3.7 6.7
40 60 nC
70 105
280 A/µs
235
Conditions
IC = 5.0A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 5.0A, VCC = 480V
VGE = 15V, RG = 100
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
TJ = 150°C, See Fig. 11, 18
IC = 5.0A, VCC = 480V
VGE = 15V, RG = 100
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
IF = 4.0A
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C 16 di/dt = 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
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