DataSheet.in

IRG4RC10SD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4RC10SD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRG4RC10SD?> डेटा पत्रक पीडीएफ

IRG4RC10SD pdf
IRG4RC10SD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltageƒ 600 — —
V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.64 — V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage — 1.58 1.8
IC = 8.0A
— 2.05 — V IC = 14.0A
VGE = 15V
See Fig. 2, 5
VGE(th)
Gate Threshold Voltage
— 1.68 —
3.0 — 6.0
IC = 8.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -9.5 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance„
3.65 5.48 — S VCE = 100V, IC =8.0A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 1.5 1.8 V IC =4.0A
See Fig. 13
— 1.4 1.7
IC =4.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
— 15 22
IC = 8.0A
— 2.42 3.6 nC VCC = 400V
See Fig. 8
— 6.53 9.8
VGE = 15V
— 76 —
TJ = 25°C
— 32 — ns IC = 8.0A, VCC = 480V
— 815 1200
VGE = 15V, RG = 100
— 720 1080
Energy losses include "tail" and
Turn-On Switching Loss
— 0.31 —
diode reverse recovery.
Turn-Off Switching Loss
— 3.28 — mJ See Fig. 9, 10, 18
Total Switching Loss
— 3.60 10.9
Total Switching Loss
— 1.46 2.6 mJ IC = 5.0A
Turn-On Delay Time
Rise Time
— 70 —
— 36 —
TJ = 150°C, See Fig. 10,11, 18
ns IC = 8.0A, VCC = 480V
Turn-Off Delay Time
Fall Time
— 890 —
— 890 —
VGE = 15V, RG = 100
Energy losses include "tail" and
Total Switching Loss
— 3.83 — mJ diode reverse recovery.
Internal Emitter Inductance
— 7.5 — nH Measured 5mm from package
Input Capacitance
Output Capacitance
— 280 —
— 30 —
VGE = 0V
pF VCC = 30V
See Fig. 7
Reverse Transfer Capacitance
— 4.0 —
ƒ = 1.0MHz
Diode Reverse Recovery Time
— 28 42 ns TJ = 25°C See Fig.
— 38 57
Diode Peak Reverse Recovery Current — 2.9 5.2
TJ = 125°C 14
A TJ = 25°C See Fig.
IF =4.0A
Diode Reverse Recovery Charge
— 3.7 6.7
TJ = 125°C 15
VR = 200V
— 40 60 nC TJ = 25°C See Fig.
Diode Peak Rate of Fall of Recovery
— 70 105
TJ = 125°C
16 di/dt = 200A/µs
— 280 — A/µs TJ = 25°C See Fig.
During tb
— 235 —
TJ = 125°C 17
Details of note  through „ are on the last page
2
www.irf.com

विन्यास 11 पेज
डाउनलोड[ IRG4RC10SD Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG4RC10SINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier
IRG4RC10SDINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English