IRG4RC10SD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — —
V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.64 — V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage — 1.58 1.8
IC = 8.0A
— 2.05 — V IC = 14.0A
VGE = 15V
See Fig. 2, 5
VGE(th)
Gate Threshold Voltage
— 1.68 —
3.0 — 6.0
IC = 8.0A, TJ = 150°C
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -9.5 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance
3.65 5.48 — S VCE = 100V, IC =8.0A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 1.5 1.8 V IC =4.0A
See Fig. 13
— 1.4 1.7
IC =4.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
— 15 22
IC = 8.0A
— 2.42 3.6 nC VCC = 400V
See Fig. 8
— 6.53 9.8
VGE = 15V
— 76 —
TJ = 25°C
— 32 — ns IC = 8.0A, VCC = 480V
— 815 1200
VGE = 15V, RG = 100Ω
— 720 1080
Energy losses include "tail" and
Turn-On Switching Loss
— 0.31 —
diode reverse recovery.
Turn-Off Switching Loss
— 3.28 — mJ See Fig. 9, 10, 18
Total Switching Loss
— 3.60 10.9
Total Switching Loss
— 1.46 2.6 mJ IC = 5.0A
Turn-On Delay Time
Rise Time
— 70 —
— 36 —
TJ = 150°C, See Fig. 10,11, 18
ns IC = 8.0A, VCC = 480V
Turn-Off Delay Time
Fall Time
— 890 —
— 890 —
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
Total Switching Loss
— 3.83 — mJ diode reverse recovery.
Internal Emitter Inductance
— 7.5 — nH Measured 5mm from package
Input Capacitance
Output Capacitance
— 280 —
— 30 —
VGE = 0V
pF VCC = 30V
See Fig. 7
Reverse Transfer Capacitance
— 4.0 —
ƒ = 1.0MHz
Diode Reverse Recovery Time
— 28 42 ns TJ = 25°C See Fig.
— 38 57
Diode Peak Reverse Recovery Current — 2.9 5.2
TJ = 125°C 14
A TJ = 25°C See Fig.
IF =4.0A
Diode Reverse Recovery Charge
— 3.7 6.7
TJ = 125°C 15
VR = 200V
— 40 60 nC TJ = 25°C See Fig.
Diode Peak Rate of Fall of Recovery
— 70 105
TJ = 125°C
16 di/dt = 200A/µs
— 280 — A/µs TJ = 25°C See Fig.
During tb
— 235 —
TJ = 125°C 17
Details of note through are on the last page
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