DataSheet.in

IRG4RC10S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4RC10S
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRG4RC10S?> डेटा पत्रक पीडीएफ

IRG4RC10S pdf
IRG4RC10S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance …
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
3.0
3.7
Typ. Max. Units
Conditions
— — V VGE = 0V, IC = 250µA
— — V VGE = 0V, IC = 1.0A
0.64 — V/°C VGE = 0V, IC = 1.0mA
1.58 1.7
IC = 8.0A
VGE = 15V
2.05 — V IC = 14A
See Fig.2, 5
1.68 —
IC = 8.0A , TJ = 150°C
— 6.0
VCE = VGE, IC = 250µA
-9.5 — mV/°C VCE = VGE, IC = 250µA
5.5 — S VCE = 100V, IC = 8.0A
— 250 µA VGE = 0V, VCE = 600V
— 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ. Max.
15 22
2.4 3.6
6.5 9.8
25 —
28 —
630 950
710 1100
0.14 —
2.58 —
2.72 4.3
24 —
31 —
810 —
1300 —
3.94 —
7.5 —
280 —
30 —
4.0 —
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 8.0A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100
Energy losses include "tail"
See Fig. 9, 10, 14
TJ = 150°C,
IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
„ Pulse width 80µs; duty factor 0.1%.
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100,
(See fig. 13a)
… Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
www.DataSheet4U.com
www.irf.com

विन्यास 8 पेज
डाउनलोड[ IRG4RC10S Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG4RC10KINSULATED GATE BIPOLAR TRANSISTOInternational Rectifier
International Rectifier
IRG4RC10KDINSULATED GATE BIPOLAR TRANSISTOInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English