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IRG4RC10KDPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTO - International Rectifier

भाग संख्या IRG4RC10KDPBF
समारोह INSULATED GATE BIPOLAR TRANSISTO
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4RC10KDPBF pdf
IRG4RC10KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
Collector-to-Emitter Breakdown Voltageƒ
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance „
Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
600 — — V VGE = 0V, IC = 250µA
— 0.58 — V/°C VGE = 0V, IC = 1.0mA
— 2.39 2.62
IC = 5.0A
VGE = 15V
— 3.25 — V IC = 9.0A
See Fig. 2, 5
— 2.63 —
IC = 5.0A, TJ = 150°C
3.0 — 6.5
VCE = VGE, IC = 250µA
— -11 — mV/°C VCE = VGE, IC = 250µA
1.2 1.8 — S VCE = 50V, IC = 5.0A
— — 250 µA VGE = 0V, VCE = 600V
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— 1.5 1.8 V IC = 4.0A
See Fig. 13
— 1.4 1.7
IC = 4.0A, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
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Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 19 29
IC = 5.0A
— 2.9 4.3 nC VCC = 400V
See Fig.8
— 9.8 15
VGE = 15V
— 49 —
28 —
97 150
ns
TJ = 25°C
IC = 5.0A, VCC = 480V
— 140 210
VGE = 15V, RG = 100
— 0.25 —
Energy losses include "tail"
— 0.14 — mJ and diode reverse recovery
— 0.39 0.48
See Fig. 9,10,14
10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 100, VCPK < 500V
— 46 —
TJ = 150°C,
See Fig. 10,11,14
— 32 —
— 100 —
ns
IC = 5.0A, VCC = 480V
VGE = 15V, RG = 100
— 310 —
Energy losses include "tail"
— 0.56 — mJ and diode reverse recovery
— 7.5 — nH Measured 5mm from package
— 220 —
VGE = 0V
— 29 — pF VCC = 30V
See Fig. 7
— 7.5 —
ƒ = 1.0MHz
— 28 42 ns TJ = 25°C See Fig.
— 38 57
TJ = 125°C 14
IF = 4.0A
— 2.9 5.2 A TJ = 25°C See Fig.
— 3.7 6.7
TJ = 125°C 15
VR = 200V
— 40 60 nC TJ = 25°C See Fig.
— 70 105
TJ = 125°C
16 di/dt = 200A/µs
— 280 — A/µs TJ = 25°C See Fig.
— 235 —
TJ = 125°C
17
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