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DMP3025LK3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - New Generation MOSFET - Diodes

भाग संख्या DMP3025LK3
समारोह New Generation MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=DMP3025LK3?> डेटा पत्रक पीडीएफ

DMP3025LK3 pdf
www.DataSheet4U.com
A Product Line of
Diodes Incorporated
DMP3025LK3
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
TA=70°C (Note 3)
(Note 2)
(Note 4)
(Note 3)
(Note 4)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
Value
-30
±20
-16.1
-12.9
-10.6
-41.9
-12.6
-41.9
Unit
V
V
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 2)
(Note 3)
(Note 5)
(Note 2)
(Note 3)
(Note 5)
(Note 6)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
4.3
34.5
10.0
80.0
2.15
17.2
29.0
12.5
58.0
1.02
-55 to 150
Unit
W
mW/°C
°C/W
°C
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMP3025LK3
Document Revision: 1
2 of 8
www.diodes.com
July 2009
© Diodes Incorporated

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
DMP3025LK3New Generation MOSFETDiodes
Diodes


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