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P10NB50FP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STP10NB50FP - ST Microelectronics

भाग संख्या P10NB50FP
समारोह STP10NB50FP
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=P10NB50FP?> डेटा पत्रक पीडीएफ

P10NB50FP pdf
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STP10NB50 STP10NB50FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
0.93
TO-220FP
3.12
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
10.6
550
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
500
Typ.
Max.
Unit
V
1
50
± 100
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 5.3 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
0.55 0.60
10.6
A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =5.3 A
Min.
5
Typ.
8
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1480
210
25
pF
pF
pF
2/9

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भाग संख्याविवरणविनिर्माण
P10NB50FPSTP10NB50FPST Microelectronics
ST Microelectronics


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