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T1010H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High temperature 10 A sensitive TRIACs - ST Microelectronics

भाग संख्या T1010H
समारोह High temperature 10 A sensitive TRIACs
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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T1010H pdf
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1 Characteristics
T1010H
Table 2. Absolute maximum ratings
Symbol
Parameter
IT(RMS) On-state rms current (full sine wave)
ITSM
I²t
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)
I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
D2PAK, TO-220AB Tc = 135 °C
F = 60 Hz
t = 16.7 ms
F = 50 Hz
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 150 °C
tp = 10 ms
Tj = 25 °C
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 20 µs
Tj = 150 °C
Tj = 150 °C
Value
10
105
100
66
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 150
Unit
A
A
A²s
A/µs
V
A
W
°C
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrant
Min.
IGT
VGT
VGD
IH (1)
VD = 12 V RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ
IT = 100 mA
IL IG = 1.2 IGT
dV/dt (1) VD = 67% VDRM, gate open, Tj = 150 °C
(dI/dt)c (1) Logic level, 0.1 V/µs, Tj = 150 °C
Logic level, 15 V/µs, Tj = 150 °C
1. For both polarities of A2 referenced to A1.
I - II - III
I - II - III
I - II - III
I - III
II
1
0.15
75
14.4
3.8
Max.
10
1.0
25
30
35
Unit
mA
V
V
mA
mA
V/µs
A/ms
2/10 Doc ID 15715 Rev 1

विन्यास 10 पेज
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