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LBC858CWT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (LBC85xxWT1G) General Purpose Transistors PNP Silicon - Leshan Radio Company

भाग संख्या LBC858CWT1G
समारोह (LBC85xxWT1G) General Purpose Transistors PNP Silicon
मैन्युफैक्चरर्स Leshan Radio Company 
लोगो Leshan Radio Company लोगो 
पूर्व दर्शन
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<?=LBC858CWT1G?> डेटा पत्रक पीडीएफ

LBC858CWT1G pdf
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G
www.datasheet4u.com
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min
ON CHARACTERISTICS
DC Current Gain
(I C = –10 µA, V CE = –5.0 V)
LBC856A, LBC857A, LBC858A
LBC856B,LBC857B, LBC858B
LBC858C,
(I C = –2.0 mA, V CE = –5.0 V)
LBC856A, LBC857A, LBC858A
LBC856B,LBC857B, LBC858B
LBC858C,
Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA)
Collector–Emitter Saturation Voltage (I C = –100 mA, I B = – 5.0 mA)
Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA)
Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA)
Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V)
Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = – 10 V, f = 1.0 MHz)
Noise Figure
(I C= – 0.2 mA,V CE= – 5.0 Vdc, R S= 2.0 k, f =1.0 kHz, BW= 200 Hz)
h FE
V CE(sat)
V BE(sat)
V BE(on)
fT
Cob
NF
125
220
420
– 0.6
100
––
ORDERING INFORMATION ( Pb– Free )
Device
Package
LBC856AWT1G_S
SOT-23
LBC856AWT3G_S
SOT-23
Shipping
3000/Tape & Reel
10000/Tape & Reel
Typ Max Unit
90
150
270
180
290
520
– 0.7
– 0.9
250
475
800
– 0.3
– 0.65
– 0.75
– 0.82
V
V
V
— — MHz
— 4.5 pF
–– 10 dB
2/6

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डाउनलोड[ LBC858CWT1G Datasheet.PDF ]


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