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D1113 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2SD1113 - Hitachi Semiconductor

भाग संख्या D1113
समारोह 2SD1113
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=D1113?> डेटा पत्रक पीडीएफ

D1113 pdf
2SD1113(K)
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter sustain
voltage
wEwmw.idttaetrastohebeat4sue.cbormeakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Turn off time
Note: 1. Pulse test.
Symbol
V(BR)CBO
VCEO(sus)
V(BR)EBO
I CEO
hFE
VCE(sat)
VBE(sat)
t on
t off
Min
300
300
7
500
Typ
2.0
23
Max Unit
500 V
—V
—V
100 µA
1.5 V
2.0 V
µs
µs
Test conditions
IC = 0.1 mA, IE = 0
IC = 3 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
IE = 50 mA, IC = 0
VCE = 300 V, RBE =
VCE = 2 V, IC = 4 A*1
IC = 4 A, IB = 40 mA*1
IC = 4 A, IB = 40 mA*1
IC = 4 A, IB1 = –IB2 = 40 mA
IC = 4 A, IB1 = –IB2 = 40 mA
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
50
iC (peak)
10
IC (max)
1.0
0.1
Ta = 25°C
1 shot pulse
0.01
0.005
0.5 1.0 2 5 10 20 50 100200 500
Collector to emitter voltage VCE (V)
2

विन्यास 5 पेज
डाउनलोड[ D1113 Datasheet.PDF ]


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