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AOT500 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors

भाग संख्या AOT500
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOT500?> डेटा पत्रक पीडीएफ

AOT500 pdf
AOT500
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
www.daBtaVshDeSeSt(4z)u.coDmrain-Source Breakdown Voltage
ID=10mA, VGS=0V
33
V
BVCLAMP Drain-Source Clamping Voltage
ID=1A, VGS=0V
36 44 V
IDSS(z)
Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
30 µA
BVGSS Gate-Source Voltage
VDS=0V, ID=250µA
20
V
IGSS Gate-Body leakage current
VDS=0V, VGS=±10V
10 µΑ
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.5 2 3 V
ID(ON)
On state drain current
VGS=10V, VDS=5V
250
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=30A
TJ=125°C
4.1
6.2
5.3
m
gFS Forward Transconductance
VDS=5V, ID=30A
95 S
VSD Diode Forward Voltage
IS=1A, VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
80 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
4735
765
340
13
6150
17
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=30A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.5,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
69 89 nC
34 nC
12 nC
15 nC
25 ns
35 ns
150 ns
62 ns
60 78 ns
84 nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. EAR and IAR are based on a 100uH inductor with Tj(start) = 25C for each pulse.
11
Rev 0_prelim: December 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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