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AOT4N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 4A N-Channel MOSFET - Alpha & Omega Semiconductors

भाग संख्या AOT4N60
समारोह 4A N-Channel MOSFET
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOT4N60?> डेटा पत्रक पीडीएफ

AOT4N60 pdf
AOT4N60 / AOTF4N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
www.daBtaVsDhSeSet4u.cDomrain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
BVDSS
/TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=2A
gFS Forward Transconductance
VDS=40V, ID=2A
VSD Diode Forward Voltage
IS=1A, VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
600
700
V
V
0.69
V/ oC
1
10
μA
±100 nA
345V
1.9 2.2
Ω
7.4 S
0.77 1
V
4A
16 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
400 511 615
40 51 65
3.5 4.4 5.3
3.3 4.2 6.3
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=4A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=300V, ID=4A,
tD(off)
Turn-Off DelayTime
RG=25Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/μs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/μs,VDS=100V
15.0
3.0
7.6
20.2
28.7
36
27
212
1.6
18.0
3.6
9.1
254
1.9
nC
nC
nC
ns
ns
ns
ns
ns
μC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.5A, VDD=50V, RG=25, Starting TJ=25°C
Rev 2. Nov.2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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