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AOT474 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors

भाग संख्या AOT474
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOT474?> डेटा पत्रक पीडीएफ

AOT474 pdf
AOT474/AOTF474
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
www.datasheeSt4TuA.cTomIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=75V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±25V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=30A
gFS Forward Transconductance
VDS=5V, ID=30A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
75
2.6
200
3.4
9.4
18
67
0.73
1
5
100
4
11.3
21.5
1
128
V
µA
nA
V
A
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2240
355
22
1.4
2805
507
36
2.8
3370
660
50
4.2
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
39 49.6 60
nC
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=30A
11 13.8 17
nC
Qgd Gate Drain Charge
8 14 20 nC
tD(on)
Turn-On DelayTime
15 ns
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=1,
34 ns
tD(off)
Turn-Off DelayTime
RGEN=3
42 ns
tf Turn-Off Fall Time
4.5 ns
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=500A/µs
35 50 65 ns
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs
330 472 614 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0:February 2009
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2009
www.aosmd.com
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