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AOT412 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power Transistor - Alpha & Omega Semiconductors

भाग संख्या AOT412
समारोह N-Channel Power Transistor
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOT412?> डेटा पत्रक पीडीएफ

AOT412 pdf
AOT412/AOB412L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Conditions
Min Typ Max Units
ID=250µA, VGS=0V
VDS=100V, VGS=0V
VDS=0V, VGS= ±25V
VDS=VGS ,ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
TO220
VGS=7V, ID=20A
TO220
VGS=10V, ID=20A
TO263
TJ=55°C
TJ=125°C
100
2.6
140
3.2
13.2
25
15.5
12.9
10
50
100
3.8
15.8
30
19.4
15.5
V
µA
nA
V
A
m
m
m
gFS Forward Transconductance
VSD Diode Forward Voltage
VGS=7V, ID=20A
TO263
VDS=5V, ID=20A
IS=1A,VGS=0V
15.2
30
19.1
m
S
0.65 1
V
IS Maximum Body-Diode Continuous Current
60 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2150
180
60
0.5
2680
260
100
1
3220
340
140
1.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=20A
36 45 54 nC
14 17 20 nC
Qgd Gate Drain Charge
9 15 21 nC
tD(on)
Turn-On DelayTime
19 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=2,
16 ns
tD(off)
Turn-Off DelayTime
RGEN=3
27 ns
tf Turn-Off Fall Time
10 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
15 22 29 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
67 96 125 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev2: Jul 2011
www.aosmd.com
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